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20022008
most citedGaMnAs-based hybrid multiferroic memory device

99 citations · 738 across the 25 of their papers we have counts for

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cond-mat.mtrl-sci2008

Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs

J. Wang, I. Cotoros, X. Liu +4

We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the…

cond-mat.mtrl-sci200821 cited

Distribution of magnetic domain pinning fields in GaMnAs ferromagnetic films

Jungtaek Kim, D. Y. Shin, Sanghoon Lee +2

Using the angular dependence of the planar Hall effect in GaMnAs ferromagnetic films, we were able to determine the distribution of magnetic domain pinning fields in this material.…

cond-mat.mtrl-sci200899 cited

GaMnAs-based hybrid multiferroic memory device

M. Overby, A. Chernyshov, L. P. Rokhinson +2

A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumptio…

cond-mat.mtrl-sci200723 cited

Definitive Evidence of Interlayer Coupling Between (Ga,Mn)As Layers Separated by a Nonmagnetic Spacer

B. J. Kirby, J. A. Borchers, X. Liu +3

We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilaye…

cond-mat.mtrl-sci200750 cited

Coherent Magnetization Precession in GaMnAs induced by Ultrafast Optical Excitation

J. Qi, Y. Xu, N. Tolk +3

We use femtosecond optical pulses to induce, control and monitor magnetization precession in ferromagnetic Ga0.965Mn0.035As. At temperatures below ~40 K we observe coherent oscilla…

cond-mat.mtrl-sci200716 cited

Magnetic Anisotropy, Spin Pinning and Exchange Constants of (Ga,Mn)As films

Ying-Yuan Zhou, Yong-Jin Cho, Zhiguo Ge +3

We present a detailed investigation of exchange-dominated nonpropagating spin-wave modes in a series of 100 nm GaMnAs films with Mn concentrations ranging from…