230 citations · 1.2k across the 20 of their papers we have counts for
20 papers
Spin and Valley Polarized Multiple Fermi Surfaces of α-RuCl/Bilayer Graphene Heterostructure
Soyun Kim, Jeonghoon Hong, Kenji Watanabe +4
We report the transport properties of -RuCl/bilayer graphene heterostructures, where carrier doping is induced by a work function difference, resulting in distinct electron…
Orbitally controlled quantum Hall states in decoupled two-bilayer graphene sheets
Soyun Kim, Dohun Kim, Kenji Watanabe +3
We report on integer and fractional quantum Hall states in a stack of two twisted Bernal bilayer graphene sheets. By exploiting the momentum mismatch in reciprocal space, we suppre…
Robust Interlayer-Coherent Quantum Hall States in Twisted Bilayer Graphene
Dohun Kim, Byungmin Kang, Yong-Bin Choi +5
We introduce a novel two-dimensional electronic system with ultrastrong interlayer interactions, namely twisted bilayer graphene with a large twist angle, as an ideal ground for re…
Preparation of large Cu3Sn single crystal by Czochralski method
Minsik Kong, Sang-Eon Park, Hye Jung Kim +13
Cu3Sn was recently predicted to host topological Dirac fermions, but related research is still in its infancy. The growth of large and high-quality Cu3Sn single crystals is, theref…
Growth of delafossite CuAlO2 single crystals in a reactive crucible
Du hyung Kim, Minsik Kong, Myeongjun Kang +5
Delafossite oxide CuAlO2 has engaged great attention as a promising p-type conducting oxide. In this work, high-quality CuAlO2 single crystals with a size of several millimeters (m…
Odd integer quantum Hall states with interlayer coherence in twisted bilayer graphene
Youngwook Kim, Pilkyung Moon, Kenji Watanabe +2
We report on the quantum Hall effect in two stacked graphene layers rotated by 2 degree. The tunneling strength among the layers can be varied from very weak to strong via the mech…
Rectification by hydrodynamic flow in an encapsulated graphene Tesla valve
Johannes Geurs, Youngwook Kim, Kenji Watanabe +3
Systems in which interparticle interactions prevail can be described by hydrodynamics. This regime is typically difficult to access in the solid state for electrons. However, the h…
Nanoscale imaging of equilibrium quantum Hall edge currents and of the magnetic monopole response in graphene
Aviram Uri, Youngwook Kim, Kousik Bagani +9
The recently predicted topological magnetoelectric effect and the response to an electric charge that mimics an induced mirror magnetic monopole are fundamental attributes of topol…
Spin-split band hybridization in graphene proximitized with -RuCl nanosheets
Soudabeh Mashhadi, Youngwook Kim, Jeongwoo Kim +8
Proximity effects induced in the 2D Dirac material graphene potentially open access to novel and intriguing physical phenomena. Thus far, the coupling between graphene and ferromag…
Single spin resonance in a van der Waals embedded paramagnetic defect
Nathan Chejanovsky, Amlan Mukherjee, Youngwook Kim +7
Spins constitute a group of quantum objects forming a key resource in modern quantum technology. Two-dimensional (2D) van der Waals materials are of fundamental interest for studyi…
Reliable postprocessing improvement of van der Waals heterostructures
Youngwook Kim, Patrick Herlinger, Takashi Taniguchi +2
The successful assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has truly been a game chang…
Even denominator fractional quantum Hall states in higher Landau levels of graphene
Youngwook Kim, Ajit C. Balram, Takashi Taniguchi +3
An important development in the field of the fractional quantum Hall effect has been the proposal that the 5/2 state observed in the Landau level with orbital index of two…
Quantum light in curved low dimensional hexagonal boron nitride systems
Nathan Chejanovsky, Youngwook Kim, Andrea Zappe +7
Low-dimensional wide bandgap semiconductors open a new playing field in quantum optics using sub-bandgap excitation. In this field, hexagonal boron nitride (h-BN) has been reported…
Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene
Youngwook Kim, Jaesung Park, Intek Song +8
Twisted bilayer graphene offers a unique bilayer two-dimensional-electron system where the layer separation is only in sub-nanometer scale. Unlike Bernal-stacked bilayer, the layer…
Structural attributes and photo-dynamics of visible spectrum quantum emitters in hexagonal boron nitride
Nathan Chejanovsky, Mohammad Rezai, Federico Paolucci +11
Newly discovered van der Waals materials like MoS, WSe, hexagonal boron nitride (h-BN), and recently have sparked intensive research to unveil the…
Charge inversion and topological phase transition at a twist angle induced van Hove singularity of bilayer graphene
Youngwook Kim, Patrick Herlinger, Pilkyung Moon +4
Van Hove singularities (VHS's) in the density of states play an outstanding and diverse role for the electronic and thermodynamic properties of crystalline solids. At the critical…
Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene
Namdong Kim, Paengro Lee, Youngwook Kim +6
We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphen…
Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE
Sahng-Kyoon Jerng, Kisu Joo, Youngwook Kim +7
Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth…
Breakdown of the interlayer coherence in twisted bilayer graphene
Youngwook Kim, Hoyeol Yun, Seung-Geol Nam +8
Coherent motion of the electrons in the Bloch states is one of the fundamental concepts of the charge conduction in solid state physics. In layered materials, however, such a condi…
Ballistic transport of graphene pnp junctions with embedded local gates
Seung-Geol Nam, Dong-Keun Ki, Jong Wan Park +3
We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electr…