124 citations · 781 across the 35 of their papers we have counts for
Showing 2021 · physics.app-phShow all
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physics.app-ph2021★ 4 cited
Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems
Jan Scharnetzky, Philipp Baumann, Christian Reichl +3
Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy…
physics.app-ph2021★ 18 cited
The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems
Elcin Külah, Christian Reichl, Jan Scharnetzky +3
Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is…