305 citations · 640 across the 9 of their papers we have counts for
7 papers · 1 filter
Tunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films
Pavlo Makushko, Sergey Kovalev, Yevhen Zabila +13
The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electr…
Local and nonlocal spin Seebeck effect in lateral Pt--Pt devices at low temperatures
Prasanta Muduli, Richard Schlitz, Tobias Kosub +4
We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic - and Pt at low temperatures. Monito…
Nanoscale mechanics of antiferromagnetic domain walls
Natascha Hedrich, Kai Wagner, Oleksandr V. Pylypovskyi +5
Antiferromagnets offer remarkable promise for future spintronics devices, where antiferromagnetic order is exploited to encode information. The control and understanding of antifer…
Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt
Michaela Lammel, Richard Schlitz, Kevin Geishendorf +8
The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR respo…
Nanomagnetism of magnetoelectric granular thin-film antiferromagnets
Patrick Appel, Brendan J. Shields, Tobias Kosub +4
Antiferromagnets have recently emerged as attractive platforms for spintronics applications, offering fundamentally new functionalities compared to their ferromagnetic counterparts…
Evolution of the Spin Hall Magnetoresistance in CrO/Pt bilayers close to the Néel temperature
Richard Schlitz, Tobias Kosub, Andy Thomas +4
We study the evolution of magnetoresistance with temperature in thin film bilayers consisting of platinum and the antiferromagnet CrO with its easy axis out of the plane. W…
Purely Antiferromagnetic Magnetoelectric Random Access Memory
Tobias Kosub, Martin Kopte, Ruben Hühne +8
Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely anti…