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20122022
most citedLow-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

428 citations · 1.1k across the 17 of their papers we have counts for

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6 papers · 1 filter

cond-mat.mes-hall2022★ 7 cited

Single exciton trapping in an electrostatically defined 2D semiconductor quantum dot

Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Michael R. Koehler +5

Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trapping for valleytronic applicatio…

cond-mat.mes-hall2022★ 45 cited

Interlayer Exciton Diode and Transistor

Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Trevor G. Stanfill +6

Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs a…

cond-mat.mes-hall2021

Steady-state nonlinear optical response of excitons in monolayer MoSe

Muhed S. Rana, Joshua R. Hendrickson, Christopher E. Stevens +7

Monolayer transition metal dichalcogenide (TMD) semiconductors such as MoSe host strongly bound excitons which are known to exhibit a strong resonant third-order nonlinear resp…

cond-mat.mes-hall2021★ 59 cited

Nanoscale trapping of interlayer excitons in a 2D semiconductor heterostructure

Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Christine Muccianti +8

For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host s…

cond-mat.mes-hall2020★ 18 cited

Low-Temperature 2D/2D Ohmic Contacts in WSe Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition

L. J. Stanley, Hsun-Jen Chuang, Zhixian Zhou +4

We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multi-terminal WSe Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating t…

cond-mat.mes-hall2016★ 428 cited

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

Hsun-Jen Chuang, Bhim Chamlagain, Michael Koehler +5

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutional…