776 citations · 1.3k across the 8 of their papers we have counts for
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Planar and 3-dimensional damage free etching of -Ga2O3 using atomic gallium flux
Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in -Ga2O3. Etching of …
Coherent Growth and Characterization of van der Waals 1T-VSe Layers on GaAs(111)B Using Molecular Beam Epitaxy
Tiancong Zhu, Dante J. O'Hara, Brenton A. Noesges +7
We report epitaxial growth of vanadium diselenide (VSe) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thick…
Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
Dante J. O'Hara, Tiancong Zhu, Amanda H. Trout +9
Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferr…
High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang, Adam Neal, Zhanbo Xia +11
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodete…
Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O'Hara +6
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work…