activity
20032023
most citedCarrier localization mechanisms in InGaN/GaN quantum wells

182 citations · 794 across the 25 of their papers we have counts for

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Showing physics.app-phShow all

6 papers · 1 filter

physics.app-ph2022★ 12 cited

Fabrication and transfer print based integration of free-standing GaN membrane micro-lenses onto semiconductor chips

Nils Kolja Wessling, Saptarsi Ghosh, Benoit Guilhabert +5

We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabr…

physics.app-ph2021★ 54 cited

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Jerome A. Cuenca, Matthew D. Smith, Daniel E. Field +8

Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemica…

physics.app-ph2020★ 29 cited

Ti alloyed -GaO: route towards wide band gap engineering

A. Barthel, J. W. Roberts, M. Napari +6

The suitability of Ti as a band gap modifier for -GaO was investigated, taking advantage of the isostructural α-phases and high band gap difference between TiO a…

physics.app-ph2019★ 66 cited

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

J. W. Roberts, P. R. Chalker, B. Ding +7

Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate te…

physics.app-ph2019

Thick adherent diamond films on AlN with low thermal barrier resistance

Soumen Mandal, Jerome Cuenca, Fabien Massabuau +9

Growth of 100 m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plas…

physics.app-ph2018

Effects of microstructure and growth conditions on quantum emitters in Gallium Nitride

Minh Nguyen, Tongtong Zhu, Mehran Kianinia +5

Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host…