182 citations · 794 across the 25 of their papers we have counts for
26 papers
Composition variations in Cu(In,Ga)(S,Se)2 solar cells: not a gradient, but an interlaced network of two phases
Aubin JC. M. Prot, Michele Melchiorre, Felix Dingwell +10
Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although t…
Additive GaN solid immersion lenses for enhanced photon extraction efficiency from diamond color centers
Xingrui Cheng, Nils Kolja Wessling, Saptarsi Ghosh +9
Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic ce…
Fabrication and transfer print based integration of free-standing GaN membrane micro-lenses onto semiconductor chips
Nils Kolja Wessling, Saptarsi Ghosh, Benoit Guilhabert +5
We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabr…
Three-photon excitation of quantum two-level systems
Viviana Villafañe, Bianca Scaparra, Manuel Rieger +8
We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, whilst resonant two-photon excitation is highly suppressed. Time-depen…
Gender issues in fundamental physics: Strumia's bibliometric analysis fails to account for key confounders and confuses correlation with causation
Philip Ball, T. Benjamin Britton, Erin Hengel +5
Alessandro Strumia recently published a survey of gender differences in publications and citations in high-energy physics (HEP). In addition to providing full access to the data, c…
Thermal stress modelling of diamond on GaN/III-Nitride membranes
Jerome A. Cuenca, Matthew D. Smith, Daniel E. Field +8
Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemica…
Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity
Yana Grishchenko, Josh Dawson, Saptarsi Ghosh +6
We studied the magnetic properties of ferromagnetic-semiconductor composites based on nickel and porous-GaN, motivated by the effort to couple magnetic and semiconductor functional…
Ti alloyed -GaO: route towards wide band gap engineering
A. Barthel, J. W. Roberts, M. Napari +6
The suitability of Ti as a band gap modifier for -GaO was investigated, taking advantage of the isostructural α-phases and high band gap difference between TiO a…
Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem
Daniel S. P. Tanner, Philip Dawson, Menno J. Kappers +2
We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special at…
Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources
Tong Wang, Tongtong Zhu, Tim J. Puchtler +6
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature s…
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
J. W. Roberts, P. R. Chalker, B. Ding +7
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate te…
Thick adherent diamond films on AlN with low thermal barrier resistance
Soumen Mandal, Jerome Cuenca, Fabien Massabuau +9
Growth of 100 m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plas…
Effects of microstructure and growth conditions on quantum emitters in Gallium Nitride
Minh Nguyen, Tongtong Zhu, Mehran Kianinia +5
Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host…
Surface zeta potential and diamond seeding on gallium nitride films
Soumen Mandal, Evan L. H. Thomas, Callum Middleton +9
Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga fac…
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
D. Kundys, D. Sutherland, M. Davies +8
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane fr…
An ultrafast polarised single photon source at 220 K
Tong Wang, Tim J. Puchtler, Tongtong Zhu +4
A crucial requirement for the realisation of efficient and scalable on-chip quantum communication is an ultrafast polarised single photon source operating beyond the Peltier coolin…
Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires
Tim J. Puchtler, Tong Wang, Christopher X. Ren +4
We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathod…
Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots
Tong Wang, Tim J. Puchtler, Saroj Kanta Patra +7
We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental d…
Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
S. Schulz, D. P. Tanner, E. P. O'Reilly +13
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an -plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor…
Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities
Alexander Woolf, Tim Puchtler, Igor Aharonovich +5
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium galliu…
Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
Tongtong Zhu, Fabrice Oehler, Benjamin P. L. Reid +4
We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the gr…
Low threshold, room-temperature microdisk lasers in the blue spectral range
Igor Aharonovich, Alexander Woolf, Kasey J. Russell +4
InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperatu…
A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity
Nan Niu, Tsung-Li Liu, Igor Aharonovich +7
Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully…
Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities
Igor Aharonovich, Nan Niu, Fabian Rol +6
Controlled tuning of the whispering gallery modes of GaN/InGaN μ-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersin…