54 citations · 97 across the 3 of their papers we have counts for
9 papers
Gender issues in fundamental physics: Strumia's bibliometric analysis fails to account for key confounders and confuses correlation with causation
Philip Ball, T. Benjamin Britton, Erin Hengel +5
Alessandro Strumia recently published a survey of gender differences in publications and citations in high-energy physics (HEP). In addition to providing full access to the data, c…
Thermal stress modelling of diamond on GaN/III-Nitride membranes
Jerome A. Cuenca, Matthew D. Smith, Daniel E. Field +8
Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemica…
Ti alloyed -GaO: route towards wide band gap engineering
A. Barthel, J. W. Roberts, M. Napari +6
The suitability of Ti as a band gap modifier for -GaO was investigated, taking advantage of the isostructural α-phases and high band gap difference between TiO a…
Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem
Daniel S. P. Tanner, Philip Dawson, Menno J. Kappers +2
We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special at…
Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources
Tong Wang, Tongtong Zhu, Tim J. Puchtler +6
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature s…
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
J. W. Roberts, P. R. Chalker, B. Ding +7
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate te…