182 citations · 794 across the 25 of their papers we have counts for
8 papers · 1 filter
Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem
Daniel S. P. Tanner, Philip Dawson, Menno J. Kappers +2
We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special at…
Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources
Tong Wang, Tongtong Zhu, Tim J. Puchtler +6
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature s…
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
D. Kundys, D. Sutherland, M. Davies +8
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane fr…
An ultrafast polarised single photon source at 220 K
Tong Wang, Tim J. Puchtler, Tongtong Zhu +4
A crucial requirement for the realisation of efficient and scalable on-chip quantum communication is an ultrafast polarised single photon source operating beyond the Peltier coolin…
Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires
Tim J. Puchtler, Tong Wang, Christopher X. Ren +4
We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathod…
Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots
Tong Wang, Tim J. Puchtler, Saroj Kanta Patra +7
We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental d…
Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
S. Schulz, D. P. Tanner, E. P. O'Reilly +13
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an -plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor…
Carrier localization mechanisms in InGaN/GaN quantum wells
D. Watson-Parris, M. J. Godfrey, P. Dawson +4
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treate…