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Interaction-induced crossover between weak anti-localization and weak localization in a disordered InAs/GaSb double quantum well
Vahid Sazgari, Gerard Sullivan, Ismet I. Kaya
We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we…
Localization of trivial edge states in InAs/GaSb composite quantum wells
Vahid Sazgari, Gerard Sullivan, İsmet İ. Kaya
InAs/GaSb heterostructure is one of the systems where quantum spin Hall effect is predicted to arise. However, as confirmed by recent experimental studies, the most significant hig…
Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells
Zhongdong Han, Tingxin Li, Long Zhang +2
We observe the magnetic oscillation of electric conductance in the two-dimensional InAs/GaSb quantum spin Hall insulator. Its insulating bulk origin is unambiguously demonstrated b…
Resistive signature of excitonic coupling in an electron-hole double layer with a middle barrier
Xingjun Wu, Wenkai Lou, Kai Chang +2
We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs…