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cond-mat.mes-hall2001
Microwave Rectification at the Boundary between Two-Dimensional Electron Systems
I. Hoxha, S. A. Vitkalov, N. A. Zimbovskaya +2
Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures,…
cond-mat2001
One-Parameter Scaling of the Conductivity of Si:B: A Temperature-Independent Variable-Range Hopping Prefactor
M. P. Sarachik, P. Dai
For insulating Si:B with dopant concentrations from 0.75 n_c to the critical concentration n_c, the conductivity ranging over five orders of magnitude collapses using a single scal…