102 citations · 194 across the 2 of their papers we have counts for
6 papers
Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
Matthew Hamer, Johanna Zultak, Anastasia V. Tyurnina +16
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of the…
Laser writable high-K dielectric for van der Waals nano-electronics
N. Peimyoo, M. D. Barnes, J. D. Mehew +9
Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved p…
Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers
Pablo U. Asshoff, Jose L. Sambricio, Sergey Slizovskiy +7
Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertica…
Anomalous twin boundaries in 2D materials
A. P. Rooney, Z. Li, W. Zhao +7
The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D m…
Ballistic molecular transport through two-dimensional channels
A. Keerthi, A. K. Geim, A. Janardanan +8
Gas permeation through nanoscale pores is ubiquitous in nature and plays an important role in a plethora of technologies. Because the pore size is typically smaller than the mean f…
Observing imperfection in atomic interfaces for van der Waals heterostructures
Aidan. P. Rooney, Aleksey Kozikov, Alexander N. Rudenko +8
Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their perfor…