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20172022
most citedFlexible Hall Sensors Based on Graphene

94 citations · 217 across the 7 of their papers we have counts for

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physics.app-ph202228 cited

Zero Bias Power Detector Circuits based on MoS Field Effect Transistors on Wafer-Scale Flexible Substrates

Eros Reato, Paula Palacios, Burkay Uzlu +13

We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS field effect transistors (FETs). The MoS

physics.app-ph202128 cited

Terahertz rectennas on flexible substrates based on one-dimensional metal-insulator-graphene diodes

Andreas Hemmetter, Xinxin Yang, Zhenxing Wang +8

Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a…

physics.app-ph202130 cited

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Zhenxing Wang, Andreas Hemmetter, Burkay Uzlu +6

Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and op…

physics.app-ph2020

Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout

D. De Fazio, B. Uzlu, I. Torre +10

Graphene-based photodetectors have shown responsivities up to 10A/W and photoconductive gains up to 10 electrons per photon. These photodetectors rely on a highly absorbi…

physics.app-ph2020

Resistance of Hall Sensors Based on Graphene to Neutron Radiation

I. Bolshakova, Ya. Kost, M. Radishevskyi +7

An in-situ study of Hall sensors based on single-layered graphene in neutron fluxes of a nuclear reactor to the fluence of 1.5e20 n/sq,m was conducted. The sensitivity of the senso…

physics.app-ph2020

Flexible One-Dimensional Metal-Insulator-Graphene Diode

Zhenxing Wang, Burkay Uzlu, Mehrdad Shaygan +8

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1…