22 citations · 57 across the 6 of their papers we have counts for
6 papers
Highly effective gating of graphene on GaN
Jakub Kierdaszuk, Ewelina Rozbiegała, Karolina Piętak +8
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type…
Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects
Jakub Kierdaszuk, Piotr Kaźmierczak, Justyna Grzonka +8
We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nano…
Surface-enhanced Raman scattering in graphene deposited on AlGaN/GaN axial heterostructure nanowires
Jakub Kierdaszuk, Mateusz Tokarczyk, Krzysztof M. Czajkowski +11
The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not…
Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array
Jakub Kierdaszuk, Piotr Kaźmierczak, Rafał Bożek +9
A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fai…
Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction
J. Papierska, A. Ciechan, P. Bogusławski +16
Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several con…
Enhanced Raman scattering and weak localization in graphene deposited on GaN nanowires
Jakub Kierdaszuk, Piotr Kaźmierczak, Aneta Drabińska +8
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport…