22 citations · 57 across the 6 of their papers we have counts for
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cond-mat.mtrl-sci2021★ 5 cited
Highly effective gating of graphene on GaN
Jakub Kierdaszuk, Ewelina Rozbiegała, Karolina Piętak +8
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type…
cond-mat.mtrl-sci2016★ 22 cited
Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction
J. Papierska, A. Ciechan, P. Bogusławski +16
Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several con…