Universal Tc depression by irradiation defects in underdoped and overdoped cuprates

Abstract

We report on a study of the influence of defects introduced in the CuO${}_2$ planes of cuprates in a wide range of hole dopings n. T${}_c$ and electrical resistivity $\rho (T)$ measurements have been performed on electron irradiated YBa${}_2$Cu${}_3$O${}_{7-\delta }$ and Tl${}_2$Ba${}_2$CuO${}_{6+x}$ single crystals. A universal scaling between the decrease in T${}_c$ and $\UNICODE[m]{0x394}ρ_{2D}\UNICODE[m]{0xd7}n$, where $\UNICODE[m]{0x394}ρ_{2D}$ is the increase of the 2D-resistance induced by the defects, is found for all the samples investigated here. This demonstrates that n is the relevant parameter to describe the transport properties all over the phase diagram, in contradiction with a recent suggestion of a change in the number of carriers from n to 1-n at the optimal doping. Moreover, the analysis of our data suggests that strong scattering persists on the overdoped side.

11 pages in Latex/Revtex format, 3 postscript figures

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