Universal Tc depression by irradiation defects in underdoped and overdoped cuprates

F. Rullier-Albenque; P. A. Vieillefond; H. Alloul; A. W. Tyler; P. Lejay; J. F. Marucco

doi:10.1209/epl/i2000-00238-x

paper

Universal Tc depression by irradiation defects in underdoped and overdoped cuprates

arXiv:cond-mat/9908405 · doi:10.1209/epl/i2000-00238-x

Abstract

We report on a study of the influence of defects introduced in the CuO $_{2}$ planes of cuprates in a wide range of hole dopings n. T $_{c}$ and electrical resistivity $I ¨ (T)$ measurements have been performed on electron irradiated YBa $_{2}$ Cu $_{3}$ O $_{7 - I^´}$ and Tl $_{2}$ Ba $_{2}$ CuO $_{6 + x}$ single crystals. A universal scaling between the decrease in T $_{c}$ and $\UNICODE[m]{0x394}Ï_{2D}\UNICODE[m]{0xd7}n$, where $\UNICODE[m]{0x394}Ï_{2D}$ is the increase of the 2D-resistance induced by the defects, is found for all the samples investigated here. This demonstrates that n is the relevant parameter to describe the transport properties all over the phase diagram, in contradiction with a recent suggestion of a change in the number of carriers from n to 1-n at the optimal doping. Moreover, the analysis of our data suggests that strong scattering persists on the overdoped side.

11 pages in Latex/Revtex format, 3 postscript figures