Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System
arXiv:cond-mat/9906285 · doi:10.1016/S1386-9477(99)00142-3
Abstract
Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal-insulator transition. The close relationship between this transition, the high field Hall insulator transition and the filling factor =3/2 insulating state is demonstrated.
6 pages, 4 figures. Submitted to EP2DS XIII conference 1999