Metallic charge density waves and surface Mott insulators for adlayer structures on semiconductors: extended Hubbard modeling
arXiv:cond-mat/9802014 · doi:10.1016/S0039-6028(97)01088-1
Abstract
Motivated by the recent experimental evidence of commensurate surface CDW in Pb/Ge(111) and Sn/Ge(111) -adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have investigated the role of electron-electron interactions, and also of electron-phonon coupling, on the narrow surface state band originating from the dangling bond orbitals of the adsorbate. We model the problem by an extended two-dimensional Hubbard model at half-filling on a triangular lattice. We include an on-site Hubbard repulsion U and a nearest-neighbor V, plus a long-ranged Coulomb tail. The electron-phonon interaction is treated in the deformation potential approximation. We have explored the phase diagram of the model including the possibility of commensurate 3x3 phases, using mainly the Hartree-Fock approximation. For U larger than the bandwidth we find magnetic insulators, possibly corresponding to the situation in SiC and in K/Si. For smaller U, the inter-site repulsion V can stabilize metallic CDW phases, reminiscent of the 3x3 structures of Sn/Ge, and possibly of Pb/Ge.
10 pages, 3 figures, presented at ECOSS-17 sept 1997
References in corpus (1)
Cited by in corpus (10)
- Charge density waves and surface Mott insulators for adlayer structures on semiconductors: extended Hubbard modeling
- The Mott Metal-Insulator transition in the half-filled Hubbard model on the Triangular Lattice
- SiC(0001): a surface Mott-Hubbard insulator
- The order-disorder character of the (3x3) to (sqrt3 x sqrt3)R30° phase transition of Sn on Ge(111)
- First Principles Calculations of Charge and Spin Density Waves of sqr3-Adsorbates on Semiconductors
- Uncertainty principle for experimental measurements: Fast versus slow probes
- Charge density wave in single-layer Pb/Ge(111) driven by Pb-substrate exchange interaction
- Charge-density-wave formation by Van Hove nesting in the α-phase of Sn/Ge(111)
- Metallic Surface Reconstruction Driven by Frustrated Antiferromagnetism
- Spectroscopic fingerprints of a surface Mott-Hubbard insulator: the case of SiC(0001)