Charge-density-wave formation by Van Hove nesting in the α-phase of Sn/Ge(111)

Abstract

We study the role of electron correlations in the formation of the surface charge-density-wave state in the Sn/Ge(111) interface. The Fermi energy of the overlayer is treated as a dynamical variable, which undergoes a substantial renormalization by the interaction. We show that the Fermi level turns out to be pinned to a Van Hove singularity in the density of states, which explains the formation of the charge-density-wave, the observation of a very flat band in photoemission experiments and the reduction of the spectral weight in the low-temperature phase.

4 pages, 4 Postscript figures

References in corpus (3)

• Renormalization group analysis of the 2D Hubbard model
• Phase transitions in two dimensions - the case of Sn adsorbed on Ge(111) surfaces
• Kinematics of electrons near a Van Hove singularity

Cited by in corpus (3)

• The order-disorder transition of the (3x3)Sn/Ge(111) phase
• Charge instabilities near a Van Hove singularity
• Surface Van Hove Singularity Enabled Efficient Catalysis: The Cases of CO Oxidation and Hydrogen Evolution Reactions