Doping induced metal-insulator transition in two-dimensional Hubbard, , and extended Hubbard, , models
arXiv:cond-mat/9711172 · doi:10.1103/PhysRevB.58.1845
Abstract
We show numerically that the nature of the doping induced metal-insulator transition in the two-dimensional Hubbard model is radically altered by the inclusion of a term, , which depends upon a square of a single-particle nearest-neighbor hopping. This result is reached by computing the localization length, , in the insulating state. At finite values of we find results consistent with where is the critical chemical potential. In contrast, for the Hubbard model. At finite values of , the presented numerical results imply that doping the antiferromagnetic Mott insulator leads to a superconductor.
19 pages (latex) including 7 figures in encapsulated postscript format. Submitted for publication in Phys. Rev. B
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