Transport through a 1D Mott-Hubbard insulator of finite length

Abstract

Transport through a 1D Mott-Hubbard insulator of a finite length $L$ is studied beyond perturbative approach. At special value of the low energy constant of the interaction we have mapped the problem onto the exactly solvable models and found current vs. voltage $V$ at high temperature $T>max(m,T_L)$ and at low energy $T,V<T_L$ ($T_L=v_c/L$; $v_c:$ charge velocity). The result shows that for the strong interaction creating a large Mott-Hubbard gap $2m\gg T_L$ inside the wire, the transport is suppressed near half-filling everywhere inside the gap except for an exponentially small region of $V,T<T_{L}exp(-2m/T_L)$.

revised version to appear in PRL, added 2 figures, rewritten the introduction piece and corrected typos

References in corpus (4)

• Precursors of Mott insulator in modulated quantum wires
• Quantized Conductance of One-Dimensional Doped Mott Insulator
• From Tomonaga-Luttinger to Fermi liquid in transport through a tunneling barrier
• Conductance of a Mott Quantum Wire

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• Fractional charge in transport through a 1D correlated insulator of finite length
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• Electron transport through a mesoscopic metal-CDW-metal junction
• Impurity pinning in transport through 1D Mott-Hubbard and spin gap insulators
• Sine-Gordon dynamics in spin transport