Impurity pinning in transport through 1D Mott-Hubbard and spin gap insulators
arXiv:cond-mat/9909410 · doi:10.1016/S0038-1098(99)00573-6
Abstract
A low energy crossover (see cond-mat/9711167) induced by Fermi liquid reservoirs in transport through a 1D Mott-Hubbard insulator of finite length is examined in the presence of impurity pinning. Under the assumption that the Hubbard gap 2M is large enough: (: charge velocity in the wire) and the impurity backscattering rate , the conductance vs. voltage/temperature displays a zero-energy resonance. Transport through a spin gapped 1D system is also described availing of duality between the backscattered current of this system and the direct current of the Mott-Hubbard insulator.
5 twocolumn pages in RevTex, no figures