Damping of Oscillations in Layer-by-Layer Growth
arXiv:cond-mat/9705100 · doi:10.1142/S0217979297001829
Abstract
We present a theory for the damping of layer-by-layer growth oscillations in molecular beam epitaxy. The surface becomes rough on distances larger than a layer coherence length which is substantially larger than the diffusion length. The damping time can be calculated by a comparison of the competing roughening and smoothening mechanisms. The dependence on the growth conditions, temperature and deposition rate, is characterized by a power law. The theoretical results are confirmed by computer simulations.
19 pages, RevTex, 5 Postscript figures, needs psfig.sty
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