On the role of step-flow advection during electromigration-induced step bunching
arXiv:cond-mat/0703749 · doi:10.1103/PhysRevB.75.241304
Abstract
We propose a one-dimensional model based on the Burton-Cabrera-Frank equations to describe the electromigration-induced step bunching instability on vicinal surfaces. The step drift resulting from atomic evaporation and/or deposition is explicitly included in our model. A linear stability analysis reveals several stability inversions as the evaporation rate varies, while a deposition flux is shown to have a stabilizing effect.
arXiv comment4 pages
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Cited by in corpus (6)
- Coexistence of bunching and meandering instability in simulated growth of 4H-SiC(0001) surface
- Step bunching process induced by the flow of steps at the sublimated crystal surface
- Instabilities at vicinal crystal surfaces - competition between the electromigration of the adatoms and the kinetic memory effect
- Revisiting step instabilities on crystal surfaces. Part II: General theory
- Burton-Cabrera-Frank theory for surfaces with alternating step types
- Emergence of local geometric laws of step flow in homoepitaxial growth