Instabilities at vicinal crystal surfaces - competition between the electromigration of the adatoms and the kinetic memory effect

Abstract

We studied the step dynamics during sublimation and growth in the presence of electromigration force acting on the adatoms. In the limit of fast surface diffusion and slow kinetics of atom attachment-detachment at the steps we formulate a model free of the quasi-static approximation in the calculation of the adatom concentration on the terraces. Numerical integration of the equations for the time evolution of the adatom concentrations and the equations of step motion reveals two different step bunching instabilities: 1) step density waves (small bunches which do not manifest any coarsening) induced by the kinetic memory effect and 2) step bunching with coarsening when the dynamics is dominated by the electromigration. The model developed in this paper also provides very instructive illustrations of the Popkov-Krug dynamical phase transition during sublimation and growth of a vicinal crystal surface.

15 pages, 6 figures

References in corpus (5)

• A quantitative theory of current-induced step bunching on Si(111)
• Scaling properties of step bunches induced by sublimation and related mechanisms: A unified perspective
• Dynamic phase transitions in electromigration-induced step bunching
• On the role of step-flow advection during electromigration-induced step bunching
• Evaporation and growth of crystals - propagation of step density compression waves at vicinal surfaces

Cited by in corpus (3)

• Step bunching process induced by the flow of steps at the sublimated crystal surface
• Revisiting step instabilities on crystal surfaces. Part II: General theory
• Non-conserved dynamics of steps on vicinal surfaces during electromigration-induced step bunching