In Situ Treatment of a Scanning Gate Microscopy Tip
arXiv:cond-mat/0703605 · doi:10.1063/1.2742314
Abstract
In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field treatment of the tip that improves the tip-induced potential. A quantum dot was used to measure the tip-induced potential.
arXiv comment3 pages, 1 figure, minor changes to fit published version
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Cited by in corpus (4)
- On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
- Imaging Coulomb Islands in a Quantum Hall Interferometer
- Scanning gate experiments: from strongly to weakly invasive probes
- A subKelvin scanning probe microscope for the electronic spectroscopy of an individual nano-device