Electronic Structure of Electron-doped Sm1.86Ce0.14CuO4: Strong `Pseudo-Gap' Effects, Nodeless Gap and Signatures of Short Range Order
arXiv:cond-mat/0612419 · doi:10.1103/PhysRevB.75.060501
Abstract
Angle resolved photoemission (ARPES) data from the electron doped cuprate superconductor SmCeCuO shows a much stronger pseudo-gap or "hot-spot" effect than that observed in other optimally doped -type cuprates. Importantly, these effects are strong enough to drive the zone-diagonal states below the chemical potential, implying that d-wave superconductivity in this compound would be of a novel "nodeless" gap variety. The gross features of the Fermi surface topology and low energy electronic structure are found to be well described by reconstruction of bands by a order. Comparison of the ARPES and optical data from the sample shows that the pseudo-gap energy observed in optical data is consistent with the inter-band transition energy of the model, allowing us to have a unified picture of pseudo-gap effects. However, the high energy electronic structure is found to be inconsistent with such a scenario. We show that a number of these model inconsistencies can be resolved by considering a short range ordering or inhomogeneous state.
5 pages, 4 figures
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