Enhancement of the electron spin memory by localization on donors in a quantum well

Abstract

We present easily reproducible experimental conditions giving long electron spin relaxation and dephasing times at low temperature in a quantum well. The proposed system consists in an electron localized by a donor potential, and immerged in a quantum well in order to improve its localization with respect to donor in bulk. We have measured, by using photoinduced Faraday rotation technique, the spin relaxation and dephasing times of electrons localized on donors placed in the middle of a 80A CdTe quantum well, and we have obtained 15ns and 18ns, respectively, which are almost two orders of magnitude longer than the free electron spin relaxation and dephasing times obtained previously in a similar CdTe quantum well (J. Tribollet et al. PRB 68, 235316 (2003)).

15 pages, 4 figures

References in corpus (5)

• Electron spin relaxation by nuclei in semiconductor quantum dots
• Low-temperature spin relaxation in n-type GaAs
• Stimulated and spontaneous optical generation of electron spin coherence in charged GaAs quantum dots
• Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures
• Optical spin pumping of modulation doped electrons probed by a two-color Kerr rotation technique

Cited by in corpus (4)

• Spin dynamics in semiconductors
• Spin coherence of a two-dimensional electron gas induced by resonant excitation of trions and excitons in CdTe/(Cd,Mg)Te quantum wells
• Theory of Electron Spin Relaxation in n-Doped Quantum Wells
• Signature of the Overhauser field on the coherent spin dynamics of donor-bound electron in a single CdTe quantum well