Temperature dependence of Mott transition in VO_2 and programmable critical temperature sensor

Abstract

The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing applied voltages, the transition temperature of the MIT current jump decreases. We find a monoclinic and electronically correlated metal (MCM) phase between the abrupt current jump and the structural phase transition (SPT). After the transition from insulator to metal, a linear increase in current (or conductivity) is shown with temperature until the current becomes a constant maximum value above T_{SPT}=68^oC. The SPT is confirmed by micro-Raman spectroscopy measurements. Optical microscopy analysis reveals the absence of the local current path in micro scale in the VO_2 device. The current uniformly flows throughout the surface of the VO_2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor.

4 pages, 3 figures

References in corpus (3)

• Evidence for a Structurally-driven Insulator-to-metal Transition in VO2: a View from the Ultrafast Timescale
• Orbital-assisted metal-insulator transition in VO${}_2$
• Monoclinic and Correlated Metal Phase in VO_2 as Evidence of the Mott Transition: Coherent Phonon Analysis

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