Angular dependence of domain wall resistivity in artificial magnetic domain structures

Abstract

We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behaviour of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho-down/rho-up~5.5, in good agreement with thin film band structure calculations.

14 pages, 3 figures

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Cited by in corpus (7)

• Tunable resistivity of individual magnetic domain walls
• Spin-orbit-coupling induced domain-wall resistance in diffusive ferromagnets
• Edge localization of spin waves in antidot multilayers with perpendicular magnetic anisotropy
• Electronic transport in ferromagnetic conductors with inhomogeneous magnetic order parameter -- domain-wall resistance
• Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As
• The Quantum Noise of Ferromagnetic $\pi$-Bloch Domain Walls
• Current-Induced Motion of Narrow Domain Walls and Dissipation in Ferromagnetic Metals