Counting statistics and super-Poissonian noise in a quantum dot

Abstract

We present time-resolved measurements of electron transport through a quantum dot. The measurements were performed using a nearby quantum point contact as a charge detector. The rates for tunneling through the two barriers connecting the dot to source and drain contacts could be determined individually. In the high bias regime, the method was used to probe excited states of the dot. Furthermore, we have detected bunching of electrons, leading to super-Poissonian noise. We have used the framework of the full counting statistics (FCS) to model the experimental data. The existence of super-Poissonian noise suggests a long relaxation time for the involved excited state, which could be related to the spin relaxation time.

References in corpus (4)

• Single-shot read-out of an individual electron spin in a quantum dot
• Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates
• Full counting statistics of super-Poissonian shot noise in multi-level quantum dots
• Excited-state spectroscopy on a nearly-closed quantum dot via charge detection

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• Shot noise and tunnel magnetoresistance in multilevel quantum dots: Effects of cotunneling
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• Quantum detectors for the third cumulant of current fluctuations
• Current-voltage correlations in interferometers
• Charge fluctuations and feedback effect in shot noise in a Y-terminal system
• Theory of quantum noise detectors based on resonant tunneling
• Shot noise in a quantum dot coupled to non-magnetic leads: Effects of Coulomb interaction
• Achieving the threshold regime with an over-screened Josephson junction
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