Light Induced Hall effect in semiconductors with spin-orbit coupling
arXiv:cond-mat/0605159 · doi:10.1103/PhysRevB.76.085343
Abstract
We show that optically excited electrons by a circularly polarized light in a semiconductor with spin-orbit coupling subject to a weak electric field will carry a Hall current transverse to the electric field. This light induced Hall effect is a result of quantum interference of the light and the electric field, and can be viewed as a physical consequence of the spin current induced by the electric field. The light induced Hall conductance is calculated for the p-type GaAs bulk material, and the n-type and p-type quantum well structures.
5 pages, 3 figures
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Cited by in corpus (6)
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Semiclassical theories of the anomalous Hall effect
- Photo-Induced Anomalous Hall Effect in Two-Dimensional Transition-Metal Dichalcogenides
- Disentangling the Competing Mechanisms of Light-Induced Anomalous Hall Conductivity in Three-Dimensional Dirac Semimetal
- Light-induced inverse spin Hall effect and field-induced circular photogalvanic effect in GaAs revealed by two-dimensional terahertz Fourier analysis
- Unified theory of the photovoltaic Hall effect by field- and light-induced Berry curvatures