Transverse electric current induced by optically injected spin current in cross-shaped InGaAs/InAlAs system
arXiv:cond-mat/0511724 · doi:10.1063/1.2196230
Abstract
We examine electric response of a linearly polarized light normally shed on a cross-shaped quasi 2-dimensional InGaAs/InAlAs system with structure inversion asymmetry. The photo-excited conduction electrons carry a pure spin current with in-plane spin polarization due to the Rashba spin-orbit interaction. We use Landauer-Büttiker formalism to show that this spin current induces two inward or outward transverse charge currents, which are observable in experiments. This effect may serve as an experimental probe of certain types of spin current.
5 pages, 3 figures
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- Deduction of Pure Spin Current from Spin Linear and Circular Photogalvanic Effect in Semiconductor Quantum Wells
- Spin-Current-Induced Charge Accumulation and Electric Current in Semiconductor Nanostructures with Rashba Spin-Orbit Coupling
- Light Induced Hall effect in semiconductors with spin-orbit coupling
- Conductance plateau in quantum spin transport through an interacting quantum dot
- Magneto-electric photocurrent generated by direct inter-band transitions in InGaAs/InAlAs two-dimensional electron gas
- Transport through a quantum dot subject to spin and charge bias: Kondo regime
- Interplay between quantum dissipation and an in-plane magnetic field in the spin ratchet effect
- Spin transverse force and quantum transverse transport
- Theory of magnetoelectric photocurrent generated by direct interband transitions in semiconductor quantum well