The semiconductor-to-ferromagnetic-metal transition in FeSb2

Abstract

We propose FeSb2 to be a nearly ferromagnetic small gap semiconductor, hence a direct analog of FeSi. We find that despite different compositions and crystal structures, in the local density approximation with on-site Coulomb repulsion correction (LDA+U) method magnetic and semiconducting solutions for U=2.6 eV are energetically degenerate similar to the case of FeSi. For both FeSb2 and FeSi (FeSi1-xGex alloys) the underlying transition mechanism allows one to switch from a small gap semiconductor to a ferromagnetic metal with magnetic moment 1 muB per Fe ion with external magnetic field.

References in corpus (4)

• Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2
• Kondo Insulator description of spin state transition in FeSb2
• First-order transition between a small-gap semiconductor and a ferromagnetic metal in the isoelectronic alloys FeSi${}_{1-x}$Ge${}_x$
• Electronic structure and magnetism for FeSi${}_{(1-x)}$Ge${}_x$ from supercell calculations

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