Effect of strong localization of doped holes in angle-resolved photoemission spectra of LaSrFeO
arXiv:cond-mat/0603333 · doi:10.1103/PhysRevB.74.115114
Abstract
We have performed an angle-resolved photoemission spectroscopy study of LaSrFeO using {\it in situ} prepared thin films and determined its band structure. The experimental band dispersions could be well explained by an empirical band structure assuming the G-type antiferromagnetic state. However, the Fe 3d bands were found to be shifted downward relative to the Fermi level () by eV compared with the calculation and to form a (pseudo)gap of eV at . We attribute this observation to a strong localization effect of doped holes due to polaron formation.
arXiv comment5 pages, 5 figures
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- Systematic tight-binding analysis of ARPES spectra of transition-metal oxides
- Correlation of high temperature X-ray photoemission spectral features and conductivity of epitaxially strained (La0.8Sr0.2)0.95Ni0.2Fe0.8O3/SrTiO3(110)