Effect of intrinsic spin relaxation on the spin-dependent cotunneling transport through quantum dots
arXiv:cond-mat/0602220 · doi:10.1103/PhysRevB.73.205309
Abstract
Spin-polarized transport through quantum dots is analyzed theoretically in the cotunneling regime. It is shown that the zero-bias anomaly, found recently in the antiparallel configuration, can also exist in the case when one electrode is magnetic while the other one is nonmagnetic. Physical mechanism of the anomaly is also discussed. It is demonstrated that intrinsic spin relaxation in the dot has a significant influence on the zero-bias maximum in the differential conductance -- the anomaly becomes enhanced by weak spin-flip scattering in the dot and then disappears in the limit of fast spin relaxation. Apart from this, inverse tunnel magnetoresistance has been found in the limit of fast intrinsic spin relaxation in the dot. The diode-like behavior of transport characteristics in the cotunneling regime has been found in the case of quantum dots asymmetrically coupled to the leads. This behavior may be enhanced by the spin-flip relaxation processes.
arXiv comment10 pages, 6 figures
References in corpus (18)
- Single-shot read-out of an individual electron spin in a quantum dot
- Zeeman energy and spin relaxation in a one-electron quantum dot
- Allowed and forbidden transitions in artificial hydrogen and helium atoms
- Electric Field Control of Spin Transport
- Theory of Transport through Quantum-Dot Spin Valves in the Weak-Coupling Regime
- Interaction-driven spin precession in quantum-dot spin valves
- Cotunneling Spectroscopy in Few-Electron Quantum Dots
- Tunnel magnetoresistance of quantum dots coupled to ferromagnetic leads in the sequential and cotunneling regimes
- Measurements of Kondo and spin splitting in single-electron transistors
- Current and power spectrum in a magnetic tunnel device with an atomic size spacer
- Transport through a double quantum dot in the sequential- and co- tunneling regimes
- Using single quantum states as spin filters to study spin polarization in ferromagnets
- Zero-bias anomaly in cotunneling transport through quantum-dot spin valves
- Spin-Polarized Electron Transport through Nanometer-Scale Al Grains
- Non-collinear magnetoconductance of a quantum dot
- Effect of Quantum Confinement on Electron Tunneling through a Quantum Dot
- Cotunneling through a quantum dot coupled to ferromagnetic leads with noncollinear magnetizations
- Negative differential conductance and magnetoresistance oscillations due to spin accumulation in ferromagnetic double-island devices
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- The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads
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