Current and power spectrum in a magnetic tunnel device with an atomic size spacer

Abstract

Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the spacer particle containing only a single energy level. It was shown that Coulomb interactions of electrons with a different spin orientation lead to an increase of the tunnel magnetoresistance. Interactions can also be responsible for the negative differential resistance. A current noise study showed, which relaxation processes can enhance or reduce fluctuations leading either to a super-Poissonian or a sub-Poissonian shot noise.

12 pages, 4 figures

References in corpus (2)

• Shot noise in ferromagnetic single electron tunneling devices
• Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime

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