The influence of spin-flip scattering on the preparation and detection of a single spin state in a quantum dot attached to a spin battery
arXiv:1105.1550 · doi:10.1016/j.ssc.2011.02.009
Abstract
Recently, the possibility of an all electrical scheme of preparation and readout for a single spin state in a single quantum dot attached to spin biased leads has been shown [F. Chi et al., Phys. Rev. B 81, 075310 (2010)]. However, spin scattering mechanisms have been omitted. To remedy this lack we consider the influence of the spin-flip scattering process on the proposed preparation and readout scheme.
7 pages, 4 figures
References in corpus (12)
- Single-shot read-out of an individual electron spin in a quantum dot
- Driven coherent oscillations of a single electron spin in a quantum dot
- Coherent control of a single electron spin with electric fields
- Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates
- Observation of extremely slow hole spin relaxation in self-assembled quantum dots
- Experimental signature of phonon-mediated spin relaxation
- Ballistic Spin Resonance
- Quantum spin pumping with adiabatically modulated magnetic barrier's
- Black holes and non-relativistic quantum systems
- Using spin bias to manipulate and measure quantum spin in quantum dots
- Effect of intrinsic spin relaxation on the spin-dependent cotunneling transport through quantum dots
- Beating in electronic transport through quantum dot based devices