Hall effect of quasi-hole gas in organic single-crystal transistors

Abstract

Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.

References in corpus (5)

• Intrinsic charge transport on the surface of organic semiconductors
• Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator
• Field-induced charge transport at the surface of pentacene single crystals: a method to study charge dynamics of 2D electron systems in organic crystals
• Effects of polarized organosilane self-assembled monolayers on organic single-crystal field-effect transistors
• Photo-induced charge transfer across the interface between organic molecular crystals and polymers

Cited by in corpus (8)

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• Band-Like Electron Transport in Organic Transistors and Implication of the Molecular Structure for Performance Optimization
• Effect of shallow traps on polaron transport at the surface of organic semiconductors
• Room Temperature Band-like Transport and Hall Effect in a High Mobility Ambipolar Polymer
• Two-dimensional hole gas in organic semiconductors
• Crossover from Super- to Sub-Diffusive Motion and Memory Effects in Crystalline Organic Semiconductors
• Revealing contributions to conduction from transport within ordered and disordered regions in highly doped conjugated polymers through analysis of temperature-dependent Hall measurements
• Charge carrier coherence and Hall effect in organic semiconductors