Room Temperature Band-like Transport and Hall Effect in a High Mobility Ambipolar Polymer

Abstract

The advent of new-class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as hopping between localized states versus extended state conduction. Here, we investigate the origin of ultra-low degree of disorder (~ 16 meV) and band-like negative temperature (T) coefficient of the field effect electron mobility in a high performance diketopyrrolopyrrole (DPP)-based semiconducting polymer. Models based on the framework of mobility edge (ME) with exponential density of states are invoked to explain the trends in transport. The temperature window over which the system demonstrates de-localized transport was tuned by a systematic introduction of disorder at the transport interface. Additionally, the Hall mobility extracted from Hall-voltage measurements in these devices was found to be comparable to field effect mobility in the high T band-like regime. Comprehensive studies with different combinations of dielectrics and semiconductors demonstrate the effectiveness of rationale molecular design which emphasizes uniform-energetic landscape and low re-organization energy.

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Cited by in corpus (3)

• Microstructural control suppresses thermal activation of electron transport at room temperature in polymer transistors
• Self-Assembled Photochromic Molecular Dipoles for High Performance Polymer Thin-Film Transistors
• Temperature dependence of mobility of conducting polymer polyaniline with secondary dopant