Local transport in a disorder-stabilized correlated insulating phase
arXiv:cond-mat/0510789 · doi:10.1103/PhysRevB.72.241311
Abstract
We report the experimental realization of a correlated insulating phase in 2D GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the insulating phase is characterized by a universal hopping transport mechanism. Transport in this regime is determined only by the average electron separation, independent of the topology of background disorder. We have discussed this observation in terms of a pinned electron solid ground state, stabilized by mutual interplay of disorder and Coulomb interaction.
4+delta pages, 4 figures, To appear in the Physical Review B (Rapid Comm)
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- Unconventional Metallicity and Giant Thermopower in a Strongly Interacting Two Dimensional Electron System
- Magnetic field induced Coulomb blockade in small disordered delta-doped heterostructures
- Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface
- Spin polarization in modulation-doped GaAs quantum wires
- Activation mechanisms in sodium-doped Silicon MOSFETs
- Determining energy relaxation length scales in two-dimensional electron gases
- Observation of geometry dependent conductivity in two-dimensional electron systems
- Quantisation of Hopping Magnetoresistance Prefactor in Strongly Correlated Two-Dimensional Electron Systems
- Magnetic Field Induced Instabilities in Localised Two-Dimensional Electron Systems