Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions
arXiv:cond-mat/0510786 · doi:10.1103/PhysRevLett.96.186603
Abstract
We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite bias. We find that the spin torque per unit current exerted on the free layer decreases by less than 10% over a bias range where the TMR decreases by over 40%. We examine the implications of this result for various spin-polarized tunneling models and find that it is consistent with magnetic-state-dependent effective tunnel decay lengths.
4 pages, 3 figures
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- Temperature effects of the magnetic tunnel junctions with periodic grating barrier
- Spin transfer in a ferromagnet-quantum dot and tunnel barrier coupled Aharonov-Bohm ring system with Rashba spin-orbit interactions