Inversion of magnetoresistance in magnetic tunnel junctions : effect of pinhole nanocontacts

Abstract

Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is attributed to the competition between the spin conserved ballistic transport through the pinhole contact where the transmission probability is close to unity and spin polarized tunneling across the insulating spacer with weak transmittivity.

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References in corpus (4)

• The origin of high transport spin polarization in La${}_{0.7}$Sr${}_{0.3}$MnO${}_3$: direct evidence for minority spin states
• Thermoelectric Modeling of the Non-Ohmic Differential Conductance in a Tunnel Junction containing a Pinhole
• Inverse Tunneling Magnetoresistance in nanoscale Magnetic Tunnel Junctions
• Anomalous bias dependence of tunnel magnetoresistance in a magnetic tunnel junction

Cited by in corpus (3)

• Enhanced Spin Dependent Shot Noise in Magnetic Tunnel Barriers
• Colossal enhancement of magnetoresistance in La${}_{0.67}$Sr${}_{0.33}$MnO${}_3$ / Pr${}_{0.67}$Ca${}_{0.33}$MnO${}_3$ multilayers: reproducing the phase-separation scenario
• Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions