Anomalous bias dependence of tunnel magnetoresistance in a magnetic tunnel junction

Abstract

We have fabricated a spin-polarized tunneling device based on half metallic manganites incorporating $B{a}_{2}LaNb{O}_6$ as insulating barrier. An anomalous bias dependence of tunnel magnetoresistance (TMR) has been observed, the first of its kind in a symmetric electrode tunnel junction with single insulating barrier. The bias dependence of TMR shows an extremely sharp zero bias anomaly, which can be considered as a demonstration of the drastic density of states variation around the Fermi level of the half metal. This serves as a strong evidence for the existence of minority spin tunneling states at the half-metal insulator interface.

arXiv comment8 pages, 4 figures, Revtex4

References in corpus (3)

• The origin of high transport spin polarization in La${}_{0.7}$Sr${}_{0.3}$MnO${}_3$: direct evidence for minority spin states
• Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance
• Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions

Cited by in corpus (3)

• Inversion of magnetoresistance in magnetic tunnel junctions : effect of pinhole nanocontacts
• High bias anomaly in YBa2Cu3O7/LaMnO_{3+delta}/YBa2Cu3O7 Superconductor/Ferromagnetic Insulator/Superconductor junctions: Evidence for a long-range superconducting proximity effect through the conduction band of a ferromagnetic insulator
• Colossal enhancement of magnetoresistance in La${}_{0.67}$Sr${}_{0.33}$MnO${}_3$ / Pr${}_{0.67}$Ca${}_{0.33}$MnO${}_3$ multilayers: reproducing the phase-separation scenario