Inverse Tunneling Magnetoresistance in nanoscale Magnetic Tunnel Junctions
arXiv:cond-mat/0505376 · doi:10.1103/PhysRevB.72.024401
Abstract
We report on our theoretical study of the inverse TMR effect in the spin polarized transport through a narrow channel. In the weak tunneling limit, we find the ordinary positive TMR. The TMR changes its sign as the transmission probability becomes large close to a unity. Our results might be relevant to the magnetic tunnel junction with a pinhole or a quantum point contact.
11 pages, 4 figures, To be published in Phys. Rev. B (in press)
References in corpus (2)
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