Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive lay

Abstract

Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and electrode SrRuO3 layers. In these capacitors, we cannot observe any extrinsic electrical effects due to either the formation of an insulating interfacial passive layer or passive-layer-induced charge injection. Such high quality interfaces result in very good fatigue endurance, even for the 5 nm thick BaTiO3 capacitor.

8 pages, 4 figures

References in corpus (2)

• Polarization Relaxation Induced by Depolarization Field in Ultrathin Ferroelectric BaTiO${}_3$ Capacitors
• Easy collective polarization switching in ferroelectrics

Cited by in corpus (8)

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• Fast Molecular-Dynamics Simulation for Ferroelectric Thin-Film Capacitors Using a First-Principles Effective Hamiltonian
• Multi-domain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors
• Depolarizing field and "real" hysteresis loops in nanometer-scale ferroelectric films
• Polarization Switching Dynamics Governed by Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films
• Coercive fields in ultrathin BaTiO3 capacitors
• Effect of a built-in electric field in asymmetric ferroelectric tunnel junctions
• Effects of anisotropic elasticity in the problem of domain formation and stability of monodomain state in ferroelectric films