Superefficient electric-field-induced spin splitting in strained p-type quantum wells

Abstract

We investigate theoretically the efficiency of the Rashba effect, i.e. the spin splitting resulting from an electric field. This is the mechanism behind the Datta-Das spin transistor. In the research efforts so far the carriers have usually been taken to be electrons. Here we demonstrate remarkable improvements by several orders of magnitude by utilising holes instead. We also show that the frequently neglected lattice-mismatch between GaAs and AlGaAs can be used to further enhance the efficiency of the spin splitting mechanism. An inverse Rashba effect is also demonstrated.

13 pages, 3 figures

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Cited by in corpus (8)

• Charge and spin dynamics driven by ultrashort extreme broadband pulses: a theory perspective
• Enhanced Rashba effect for hole states in a quantum dot
• Efficient switching of Rashba spin splitting in wide modulation-doped quantum wells
• Analysis of electric-field-induced spin splitting in wide modulation-doped quantum wells
• Sagnac Rotational Phase Shifts in a Mesoscopic Electron Interferometer with Spin-Orbit Interactions
• Photo-induced spin filtering in a double quantum dot
• Terahertz magneto-optical spectroscopy of two-dimensional hole and electron systems
• Semiconductor Spintronics: Progress and Challenges