Transition from Mott insulator to superconductor in GaNb${}_4$Se${}_8$ and GaTa${}_4$Se${}_8$ under high pressure

Abstract

Electronic conduction in GaM${}_4$Se${}_8$ (M=Nb;Ta) compounds with the fcc GaMo${}_4$S${}_8$-type structure originates from hopping of localized unpaired electrons (S=1/2) among widely separated tetrahedral M${}_4$ metal clusters. We show that under pressure these systems transform from Mott insulators to a metallic and superconducting state with T${}_C$=2.9 and 5.8K at 13 and 11.5GPa for GaNb${}_4$Se${}_8$ and GaTa${}_4$Se${}_8$, respectively. The occurrence of superconductivity is shown to be connected with a pressure-induced decrease of the MSe${}_6$ octahedral distortion and simultaneous softening of the phonon associated with MSe-bonds.

10 pages, 5 figures

References in corpus (1)

• Mott Insulator to high \tc Superconductor via Pressure: Resonating Valence Bond theory and prediction of new Systems

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