Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy

Abstract

We report the observation of anomalies in the longitudinal magnetoresistance of tensile-strained (Ga,Mn)As epilayers with perpendicular magnetic anisotropy. Magnetoresistance measurements carried out in the planar geometry (magnetic field parallel to the current density) reveal "spikes" that are antisymmetric with respect to the direction of the magnetic field. These anomalies always occur during magnetization reversal, as indicated by a simultaneous change in sign of the anomalous Hall effect. The data suggest that the antisymmetric anomalies originate in anomalous Hall effect contributions to the longitudinal resistance when domain walls are located between the voltage probes. This interpretation is reinforced by carrying out angular sweeps of $\vec{H}$, revealing an antisymmetric dependence on the helicity of the field sweep.

Submitted to Phys. Rev. B

References in corpus (6)

• Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As
• Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
• Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
• Antisymmetric magnetoresistance in magnetic multilayers with perpendicular anisotropy
• Electrical Transport Across an Individual Magnetic Domain Wall in (Ga,Mn)As Microdevices
• Pinning a Domain Wall in (Ga,Mn)As with Focused Ion Beam Lithography

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• Antisymmetric magnetoresistance and helical magnetic structure in compensated Gd/Co multilayer
• Measurements of Nanoscale Domain Wall Flexing in a Ferromagnetic Thin Film
• Non-reciprocal magnetoresistance, directional inhomogeneity and mixed symmetry Hall devices
• Influence of the different strains components on the uniaxial magnetic anisotropy constants for (Ga,Mn)As bulk system: a First-Principles Study