The influence of the long-lived quantum Hall potential on the characteristics of quantum devices

Abstract

Novel hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same 2-dimensional electron gas (2DEG) material. These observations show that the induced quantum Hall potential at the edges of the 2DEG reservoirs influences transport through the devices, and have important consequences for the magneto-transport of all lateral quantum devices.

arXiv comment5 pages, 4 figures

References in corpus (1)

• The Addition Spectrum of a Lateral Dot from Coulomb and Spin Blockade Spectroscopy

Cited by in corpus (7)

• Hysteresis and spin phase transitions in quantum wires in the integer quantum Hall regime
• Measurements of the magnetic properties of conduction electrons
• Hysteretic phenomena in a 2DEG in quantum Hall effect regime studied in a transport experiment
• Charge metastability and hysteresis in the quantum Hall regime
• Dynamics of Density Imbalanced Bilayer Holes in the Quantum Hall Regime
• Hysteresis in the Conductance of Asymmetrically Biased GaAs Quantum Point Contacts with in-plane Side Gates
• Quantum Hall induced currents and the magnetoresistance of a quantum point contact